This Specification covers the requirements for siliconwafers for use in photovoltaic (PV) solar cell manufacture. To permit commonprocessing equipment to be used in multiple fabrication lines, it is essentialfor the wafer dimensions to be standardized.

This Specification provides standardized dimensional andcertain other common characteristics of silicon wafers based on currentlywidely used sizes for photovoltaic applications.

This Specification also provides a tabular specificationformat for order entry so that relevant non-standardized wafer characteristicsand extensions of wafer sizes for research, development, and new requirementscan be easily and consistently specified in commercial transactions.

This Specification covers ordering information and certainrequirements for single crystal silicon wafer and cast silicon wafer for PVapplications.

This Specification allows growth methods that includeCzochralski (Cz) method, Floating Zone (FZ) method for single crystal siliconwafers, and casting method with and without seed for cast silicon wafer.

The specified cast silicon wafer includes cast siliconcategory I wafer and cast silicon category II wafer.

A complete purchase specification requires that variousphysical properties be specified along with test methods suitable fordetermining their magnitude. The specification format in this Standard providesa comprehensive listing of such properties and available associated testmethods (see Appendix 1).

Referenced SEMI Standards (purchase separately)

SEMI M35 — Guide for Developing Specifications for SiliconWafer Surface Features Detected by Automated Inspection

SEMI M44 — Guide to Conversion Factors for InterstitialOxygen in Silicon

SEMI M53 — Practice for Calibrating Scanning SurfaceInspection Systems Using Depositions of Monodisperse Polystyrene Latex Sphereon Unpatterned Semiconductor Wafer Surfaces

SEMI M58 — Test Method for Evaluating DMA-Based ParticleDeposition Systems and Processes

SEMI M59 — Terminology for Silicon Technology

SEMI MF26 — Test Method for Determining the Orientation ofa Semiconductive Single Crystal

SEMI MF42 — Test Method for Conductivity Type of ExtrinsicSemiconducting Materials

SEMI MF84 — Test Method for Measuring Resistivity ofSilicon Wafers with an In-Line Four-Point Probe

SEMI MF523 — Practice for Unaided Visual Inspection ofPolished Silicon Wafer Surfaces

SEMI MF391 — Test Method for Minority Carrier DiffusionLength in Extrinsic Semiconductors by Measurement of Steady-State SurfacePhotovoltage

SEMI MF533 — Test Method for Thickness and Thickness ofVariation of Silicon Wafers

SEMI MF657 — Test Method for Measuring Warp and TotalThickness Variation on Silicon Wafers by Noncontact Scanning

SEMI MF673 — Test Method for Measuring Resistivity ofSemiconductor Wafers or Sheet Resistance of Semiconductor Films with aNoncontact Eddy-Current Gage

SEMI MF847 — Test Method for Measuring CrystallographicOrientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

SEMI MF978 — Test Method for Characterizing SemiconductorDeep Levels by Transient Capacitance Techniques

SEMI MF1188 — Test Method for Interstitial Oxygen Contentof Silicon by Infrared Absorption with Short Baseline

SEMI MF1390 — Test Method for Measuring Bow and Warp onSilicon Wafers by Automated Noncontact Scanning

SEMI MF1391 — Test Method for Substitutional Atomic CarbonContent of Silicon by Infrared Absorption

SEMI MF1617 — Test Method for Measuring Surface Sodium,Aluminum, Potassium, and Iron on Silicon and Epi Substrates by Secondary IonMass Spectrometry

SEMI MF1810 — Test Method for Counting PreferentiallyEtched or Decorated Surface Defects in Silicon Wafers

SEMI MF1982 — Test Methods for Analyzing OrganicContaminants on Silicon Wafer Surfaces by Thermal Desorption Gas Chromatography

SEMI PV1 — Test Method for Measuring Trace Elements inSilicon Feedstock for Silicon Solar Cells by High-Mass Resolution GlowDischarge Mass Spectrometry

SEMI PV9 — Test Method for Excess Charge Carrier Decay inPV Silicon Materials by Non-Contact Measurements of Microwave Reflectance Aftera Short Illumination Pulse

SEMI PV13 — Test Method for ContactlessExcess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers,Ingots, and Bricks Using an Eddy-Current Sensor

SEMI PV25 — Test Method for Simultaneously MeasuringOxygen, carbon, Boron and Phosphorus in Solar Silicon Wafers and Feedstock bySecondary Ion Mass Spectrometry

SEMI PV28 — Test Method for Measuring Resistivity or SheetResistance with a Single-Sided Noncontact Eddy-Current Gauge

SEMI PV39 — Test Method for In-Line Measurement of Cracksin PV Silicon Wafers by Dark Field Infrared Imaging

SEMI PV40 — Test Method for In-Line Measurement of SawMarks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple LineSegments

SEMI PV41 — Test Method for In-Line, Noncontact Measurementof Thickness and Thickness Variation of Silicon Wafers for PV ApplicationsUsing Capacitive Probes

SEMI PV52 — Test Method for In-Line Characterization ofPhotovoltaic Silicon Wafers Regarding Grain Size

Revision History

SEMI PV22-0321 (technical revision)

SEMI PV22-0817 (technical revision)

SEMI PV22-0716 (technical revision)

SEMI PV22-1011 (first published – replaces SEMI M6)